Formation of surface reliefs on amorphous multilayers and its appication  Page description

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Details of project

  
Identifier
46758
Type K
Principal investigator Kökényesi, Sándor Jenő
Title in Hungarian Felületi reliefek kialakítása és alkalmazása amorf multirétegekben
Title in English Formation of surface reliefs on amorphous multilayers and its appication
Panel Informatics and Electrical Engineering
Department or equivalent Department of Experimental Physics (University of Debrecen)
Participants Csík, Attila
Iván, István
Mojzes, Imre
Szabó, István
Starting date 2004-01-01
Closing date 2008-12-31
Funding (in million HUF) 6.910
FTE (full time equivalent) 0.00
state closed project





 

Final report

  
Results in Hungarian
Fényérzékeny amorf kalkogenid félvezetőkből fejlesztettünk ki különböző nanostrukturált multirétegeket, amelyek alkalmasok felületi optikai (elnyelés és törésmutató) valamint geometriai (lokális térfogatváltozás) mikro- és nanoreliefek egy lépésben történő kialakítására. A három és ötven nanométer közötti modulációs periódussal rendelkező multirétegekben összeillesztett anyagokat (As2S3, AsSe, GeS, SexTe1-x, Se, Te, Bi, Sb, SiOx) valamint a rétegek teljes vastagságát és a reliefet kialakító külső hatásokat (fény-, proton- deuteron-nyalábok, hőkezelés) módosítva kiválasztottuk az optimális paraméterekkel rendelkező struktúrákat és eljárásokat. Kimutattuk, hogy az ionok és a lézerfény hatására fellépő fotoindukált változások (részben reverzibilis sötétedés a különálló vastagrétegek optikai elnyelési él tartományaiban) valamint a nanomultirétegekben elsődlegesen irreverzibilis világosodást okozó interdiffúzió és az ezekkel összefüggő optikai- és térfogatváltozás sok tekintetben hasonlók és a hőcsúcs jelenségként írhatók le egy modell keretében. Megmutattuk, hogy a kifejlesztett struktúrákon 200-500 nm laterális felbontással időben stabil, 10-200 nm magas és megváltozott törésmutatóval, optikai elnyeléssel rendelkező reliefek írhatók direkt módban és alkalmazhatók optikai adattárolásra, optoelektronikai elemek kialakítására.
Results in English
Different nanostructured multilayers were developed on the basis of light-sensitive amorphous chalcogenide semiconductors which are applicable for a direct fabrication of surface optical (absorption and refractive index) as well as geometrical (local expansion) micro- and nanoreliefs. Changing the materials (As2S3, AsSe, GeS, SexTe1-x, Se, Te, Bi, Sb, SiOx) combined in the multilayers with modulation periods between three and fifty nanometers as well as the total thickness of the layers and the external influences used for the relief fabrication ( light-, proton-, deuteron-beams, heat treatment) we have selected structures and processes with optimum parameters. It was established, that the photo-induced effects under the laser illumination (partially reversible darkening in the spectral range of optical absorption edge of the separate thick layers) as well as the irreversible bleaching due to the interdiffusion in the nanomultilayers and the related optical and volume changes are similar in many aspects and may be described in the framework of the thermal spike model. It was shown, that 10-200 nm high relief with changed optical absorption and refractive index can be recorded in a direct mode with 200-500 nm lateral resolution in the developed structures and applied for optical storage, formation of elements for optoelectronics.
Full text http://real.mtak.hu/1569/
Decision
Yes





 

List of publications

  
Ivan I; Veres M; Pocsik I; Kokenyesi S.: Structural and optical changes in As2S3 thin films induced by light ion irradiation, phys.stat.sol.(a) 201:3193-3199., 2004
AdarshK.V; Sangunni K.S; Kökényesi s; Iván I.: Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayerd a-Se/As2S3 films, J. Appl.Phys. 94:, 2005
Malyovanik M; Shiplyak M; Cheresnya V; Ivan I; Kokenyesi S; Csik A.: Stimulated transformations in nano-layered composites with Se0.6Te0.4., Journal of Optoelectronics and Advanced Materials, 7:1451-1456, 2005
Malyovanik M; Shiplyak M; Kikineshi A; Csik A; Sangunni K.: Photodiffusion processes in chalcogenide glassy semiconductor multilayered nanostructures, 10th International conference on physics and technology of thin films, Ivano-Frankovsk, 2005.05.16-21.Proceedings, P.1:82., 2005
Adarsh KV, Sangunni KS, Kokenyesi S, Ivan I, Shipjak M.:: Luminescence in amorphous chalcogenide multilayers,, Physics and Chemistry of Glasses-European Journal of Glass Science and Technology P.B 47 (2): 198-202, 2006
Adarsh KV, Sangunni KS, Shripathi T, Kokenyesi S, Shipljak M.:: Photoinduced interdiffusion in nanolayered Se/As2S3 films: Optical and x-ray photoelectron spectroscopic studies, Journal of Applied Physics 99 (9): Art. No. 094301 MAY, 2006
Kokenyesi S., Takats V., Vojnarovich I., Cheresnya V., Shiplyak M.:: Photo-stimulated changes in metal-amorphous chalcogenide layered nanocomposites, SPIE Proc., V.6327 Nanoengineering:Fabrication, properties, Optics and Devices 632711, 1-9 ,, 2006
Shiplyak M.,Ivan S., Malyovanik M., Kikineshi O, Beke D., Sabo I. :: Material dlja amplitudno-fazovoho zapisu., Патент 75535, G03G 5/00, пуб. 17.04.2006, 2006
Kokenyesi S.:: Amorphous Chalcogenide Nanomultilayers: Research and Development, J. Optoelectronics and Advanced Materials, 8, 2093-2096, 2006
Beke D.L., Kokenyesi S., Sangunni S.R., Shiplyak M.:: Amorphous semiconductor nanomultilayers: research and development, Int.Meeting „Clusters and Nanostructured Materials (CNM’2006) Uzhgorod, Ukraine, Oct.9-12,2006 , MATERIALS, pp.16-17., 2006
Kökényesi Sándor, Beke Dezső:: Amorf multirétegek: kutatások és fejlesztések, MTA Anyagtudományi nap, május,, 2006
Vojnarovich I., Pinzenik V., Makauz I., Shiplyak M., Kikineshi A., Daroczi L.: Nanocomposites in Bi-As-S System, ISNOG2006, Bangalore, India, Abs.p.77, 2006
Kokenyesi S, Ivan I, Takats V, Pálinkás J., Biri S., Szabo I..: Formation of surface structures on amorphous chalcogenide films, Journal of Non-cryst. Sol. 353: 1470-1473, 2007, 2007
Kokenyesi S., Shiplyak M., Malyovanik M.: Photo- and thermo-induced interdiffusion and optical recording in Se/As2S3-type multilayered nanostructures (in Ukr.), II Ukrainian conference on Physics of Semiconductors, Chernoutsy, 20-24 sept., abs.p 226., 2004
Kokenyesi S.,Beke D., Sangunni K., Takats V., Csik A., Daroczi L.: Photoinduced transformations in amorphous chalcogenide nano-multilayers., Journal of Materials Science: Materials in Electronics, Accepted Article No.: s10854-007-9460-9, 2008
Adarsh K.V., Sangunni K.S., Suchard C.S., Philip R., Kokenyesi S., Takats V.:: Observation of three-photon absorption and saturation of two-photon absorption in amorphous nanolayered Se/As2S3 thin film structures, Journal of Applied Physics, 102 026102, 2007
Takáts V., Voynarovich I., Shiplyak M., Daroczi L., Sangunni K.S., Kokenyesi S.: Stimulated structural transformations in Sb(Bi)/As2S3 heterostructures, 3d Int. Conference on Amorphous and nanostructured Chalcogenides, Brasov, Romania, July 2-6, 2007, p.8, 2007
Kokenyesi S., Beke D., Sangunni K., Takats V., csik A., Daroczi L.: Photoinduced transformations in amorphous chalcogenide nano-multilayers, Int. Conf.on Optical, Optoelectronic and Photonic Materials and Applications, ICOOPMA'2007, London, UK, 30 July-3 August, 2007, 1p., 2007
Kokenyesi S.: Investigations in materials science for micro-and nanotechnologies, 2nd MINAEAST –NET Workshop , National Centre of Scientifgic Research „Demokritos”, Athene, Greece, 15-16 July, 2005., 2005
Kokenyesi S., Beke D.L., Szabo I.A., Ivan I., Malyovanik M: Optical recording in amorphous chalcogenide nano-multilayers., 4th International Workshop on Innovative Mass Storage Technologies. Sept.28-29, Aachen, Germany, p.H19., 2004
Němec P., Takats V., Csik A., Kokenyesi S.:: GeSe/GeS nanomultilayers prepared by pulsed laser deposition., 3rd International Conference on Optoelectronics and Spectroscopy of Nano-structured Thin Films and Materials, October 15-19, 2007, Beijing, China, Abstract Book, p. 53., 2007
Ivan I; Beke D; Kokenyesi S; Szabo I.A; Csik A.: Light and ion induced interdiffusion in amorphous chalcogenide multilayers., Journal of Optoelectronics and Advanced Materials, 7:1831-1836, 2005
Ivan I; Szabó I.A; Kökényesi S.: Nonlinear photo-diffusion in amorphous chalcogenide multilayers, Defect and Diffusion Forum 237-240: 1210-1215, 2005
Ivan I; Szegedi S; Daroczi L; Szabo I.A; Kokenyesi S.: Deuteron irradiation induced changes in amorphous AsSe films, Nuclear Instruments and Methods in Physics Research SectionB: beam interactions with materials and atoms 229: 240-245, 2005
Ivan I, Erdelyi G, Kokenyesi S, Beke DL: Effect of pressure on photo-induced interdiffusion in amorphous chalcogenide nanomultilayers, Journ.Non-Cryst.Solids 352:1591-1594, 2006
Kokenyesi S, Ivan I, Malyovanik M, Messaddeq SH, Messaddeq Y, Ribeiro SJL.:: Optical recording in Se(Te)/As2S3 multilayers, Physics and Chemistry of Glasses-European Journal of Glass Science and Technology P.B 47 (2): 211-214, 2006
Kokenyesi S, Malyovanik M, Cheresnya V, Shiplyak M, Csik A.:: Stimulated structural transformations in Se0.6Te0.4/SiOx nano-layered composite, Journ. Non-Cryst. Solids 352: 1529-1533, 2006
Kokenyesi S., Ivan I., Csik A., Szabo I., Beke D.:: Stimulated interdiffusion and optical recording in amorphous chalcogenide nanomultilayers, SPIE Proc., V.6327 Nanoengineering:Fabrication, properties, Optics and Devices 63270W,1-9 ,, 2006
Takats V., Nemec P., Csik A., Kokenyesi S.:: Induced interdiffusion in Se/As2S3 nanomultilayers obtained by pulsed laser deposition and thrmal evaporation, Journal of Physics and Chemistry of Solids, 68,948-952., 2007
Takats V., Vojnarovich I., Pinzenik V., Mojzes I., Kokenyesi S., Sangunni K.S. :: Stimulated changes in Bi(Sb)/As2S3 nanolayered structures, Journal of Physics and Chemistry of Solids, 68, 943-947, 2007
Trunov M.L., Dub S.N., Nagy P.M., Kokenyesi S. :: Photoplasticity of As2Se3 films investigated with combined nanoindentation and AFM methods., Journal of Physics and Chemistry of Solids, 68, 1062-1068, 2007



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