Growth, synthesis and microscopy of wide bandglap semiconducting layers  Page description

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Details of project

  
Identifier
47141
Type K
Principal investigator Pécz, Béla
Title in Hungarian Széles tiltottsávú félvezető rétegek növekedése, szintézise és mikroszkópiája
Title in English Growth, synthesis and microscopy of wide bandglap semiconducting layers
Panel Informatics and Electrical Engineering
Department or equivalent MTA Research Institute for Technical Physics and Materials Science
Participants Barna, Árpád
Dobos, László
Lábár, János
Makkai, Zsolt
Radnóczi, György
Radnóczi, György Zoltán
Tóth, Lajos
Veisz, Bernadett
Starting date 2004-01-01
Closing date 2008-12-31
Funding (in million HUF) 8.493
FTE (full time equivalent) 0.00
state closed project





 

Final report

  
Results in Hungarian
Munkánk során a széles tiltott sávú félvezetők közül a SiC-dal, GaN-del ZnO-dal és kontaktusaikkal foglalkoztunk. Meghatároztuk a jellemző hibákat és a diszlokáció sűrűség értékeket. Sikerült magyarázatot adnunk a gyémánt és SiC illeszkedésére. Zafír hordozóra növesztett ZnO rétegeket vizsgálva megállapítottuk, hogy MgO puffer réteg képes akár teljesen MgOAl2O3 spinel réteggé alakulni, ami csökkenti a misfit-et. Különféle félvezető nanoszerkezeteket állítottunk elő, mint pl. 300 nm hosszú és 15 nm széles szálakból álló Al1-xInxN nanofűvet magnetronos porlasztással. A megfigyelt szerkezetet leírtuk (a koncentráció a nanofű szálainak szélességében változik), hozzá modelt alkottunk és kísérletileg is igazoltuk. Az epitaxiális SiC kristályokat eredményező CO-ban hőkezelt (SiO2-dal borított) Si szeleteket tovább oxidálva azokból többféle nanoszerkezetet állítottunk elő. Mind SiC-hoz, mind GaN-hez készítettünk fém kontaktus rétegeket, melyeket átfogóan vizsgáltunk. Megállapítottuk, hogy a p-tipusú SiC-hoz ohmos kontaktusként használt Ti3SiC2 a Si poláros oldalon alakul ki az Al/Ti kontaktusok hőkezelése során.
Results in English
During the project wide bandgap semiconductors (like SiC, GaN, ZnO) and contacts to them have been investigated. The characteristic defects and dislocation density values have been determined. An explanation was given for the matching of diamond and SiC.Investigating ZnO layers grown on sapphire with a MgO buffer it was found that the MgO can transform to a MgOAl2O3 spinel, which decreases the misfit. Different semiconducting nanostructures have been prepared, like for example the magnetron sputtered, columnar Al1-xInxN, which has a morphology similar to the grass, therefore we named that as nanograss. The observed structure was described in details (the concentration is changed along the diameter of the columns), a model was created and experimentaly proved. Different nanostructures have been prepared from the SiC nanocrystals formed in CO annealing of oxide covered silicon wafers seprating them from the silicon by further oxidization. Metal contacts have been prepared both to SiC and GaN, which have been investigated in details. On the Al/Ti contacts (used as ohmic contacts to p-type SiC) we have concluded, that Ti3SiC2 phase (responsible for teh ohmic behaviour) is formed on the silicon polar side of SiC, only.
Full text http://real.mtak.hu/1704/
Decision
Yes





 

List of publications

  
D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart, B. Beaumont: Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template, J. of Appl. Phys., 96 (2004) 799-806, 2004
V.G. Mansurov, A.Yu. Nikitin, Yu.G. Galitsyn, S.N. Svitasheva, K.S. Zhuravlev, Z. Osvath, L. Dobos, Z.E. Horvath and B. Pecz: AlN growth on sapphire substrate by ammonia MBE, Journal of Crystal Growth, Volume 300, Issue 1, 1 March 2007, Pages 145-150, 2007
B. Pécz: Bookreview on Silicon Carbide, Recent Major Advances eds. W.J. Choyke, H. Matsunami and G. Pensl, Contemporary Physics, Vol. 46, No. 5 (2005) 386-388, 2005
B. Pécz, Zs Makkai, E. Frayssinet, B. Beaumont and P. Gibart: Transmission electron microscopy of GaN layers grown by ELO and micro – ELO techniques, phys. stat. sol. (c), 2 (2005) 1310-1313, 2005
G. Battistig, N.Q. Khánh, P. Petrik, T. Lohner, L. Dobos, B. Pécz, J. García López and Y. Morilla: A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry and transmission electron microscopy, J. of Appl. Phys., 100, 093507 (2006) (5 pages), 2006
P. Basa, P. Petrik, M. Fried, L. Dobos, B. Pécz, L. Tóth: Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models, Physica E: Low-dimensional Systems and Nanostructures, Volume 38, Issues 1-2, April 2007, Pages 76-79, 2007
L. Dobos, B. Pecz, L. Toth, Zs.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua: Structural and electrical properties of Au and Ti/Au contacts to n-type, Vacuum, In Press, Corrected Proof, Available online 22 November 2007, 2008
B Pécz, L Tóth, L Dobos, P Bove, H Lahrèche and R Langer: Composite substrates for GaN growth, Proc. of Microscopy of Semiconducting Materials 2007, (4 pages), 2008
L Tóth, L Dobos, B Pécz, M A di Forte Poisson and R Langer: GaN Layers Grown by MOCVD on Composite SiC Substrate, Proc. of Microscopy of Semiconducting Materials 2007, (4 pages), 2008
B. Veisz and B. Pécz: Polarity dependent Al-Ti contacts to 6H-SiC, Appl. Surf. Sci., 233 (2004) 360-365,, 2004
György Z. Radnóczi, Timo Seppänen, Béla Pécz, Lars Hultman, Jens Birch: Growth of highly curved Al1-xInxN nanocrystals, physica status solidi (a) Volume 202, Issue 7, Date: May 2005, Pages: R76-R78, 2005
H. Weishart, F. Eichhorn, V. Heera, B. Pécz, Á. Barna, and W. Skorupa: High-fluence Si-implanted diamond: Optimum implantation temperature for SiC form, J. Appl. Phys. 98, 043503 (2005) (6 pages), 2005
Makkai Z, Pécz B, Bársony I, Vida G, Pongrácz A, Josepovits KV, Deák P: Isolated SiC nanocrystals in SiO2, APPLIED PHYSICS LETTERS 86(25): Art. No. 253109 (2005), 2005
B. Pécz, Á. Barna, V. Heera and W. Skorupa: Magic matching in semiconductor heterojunctions, Springer Proceedings in Physics, 107 (2006) 159-162, 2006
B. Pécz, A. El-Shaer, A. Bakin, A.-C.Mofor, A. Waag and J. Stoemenos: Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer, J. of Appl. Phys., 100 (2006) 103506 (7 pages), 2006
G. Z. Radnóczi and B. Pécz: TEM Specimen Preparation for Exploring the Buried Interfaces in Plan-view, J. of Microscopy, 224(3) ( 2006) 328, 2006
L. Dobos, B. Pécz, L. Tóth, Zs.J. Horváth, Zs.E. Horváth, A. Tóth, E. Horváth, B. Beaumont and Z. Bougrioua: Metal contacts to n-GaN, Applied Surface Science, 253, (2006) 655-661, 2006
A. Bakin; Joseph Kioseoglou; B. Pecz; A. El-Shaer; A.-C. Mofor; J. Stoemenos; A. Waag: Misfit reduction by a Spinel layer formed during the epitaxial growth of ZnO on Sapphire using a MgO buffer layer, J. of Crystal Growth 308 (2007) 314-320, 2007
B. Pécz, Zs. Makkai, A. Pongrácz, I. Bársony, P. Deák and K.V. Josepovits: Formation of epitaxial SiC nanocrystals, Surface Science, 601 (2007) 2671-2674, 2007



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