Nanoparticles and nanolayers in semiconductor structures - electrical and photoelectrical properties  Page description

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Details of project

  
Identifier
48696
Type K
Principal investigator Horváth, Zsolt József
Title in Hungarian Nanoszemcsék és nanorétegek félvezető szerkezetekben - elektromos és fotoelektromos tulajdonságok
Title in English Nanoparticles and nanolayers in semiconductor structures - electrical and photoelectrical properties
Panel Informatics and Electrical Engineering
Department or equivalent MTA Research Institute for Technical Physics and Materials Science
Participants Basa, Péter
Dózsa, László
Petrik, Péter
Podör, Bálint
Zolnai, Zsolt
Starting date 2005-01-01
Closing date 2008-12-31
Funding (in million HUF) 13.611
FTE (full time equivalent) 4.32
state closed project





 

Final report

  
Results in Hungarian
Különböző fém-szigetelő-félvezető (MIS) szerkezetek és félvezető heteroszerkezetek előállítási körülményeit és elektromos tulajdonságait vizsgáltuk. A tevékenység fő részét egy eredeti munka alkotta, melynek célja olyan fém-nitrid-oxid-szilícium szerkezetek memória tulajdonságainak optimalizálása volt, melyek Si vagy Ge nanokristályokat tartalmaznak a nitrid-oxid határfelületen vagy a nitridrétegben. Egy másik fontos eredmény, hogy kísérleti összefüggést találtunk a Si és Ge nanokristályok mérete és a dielektromos függvényük között.
Results in English
The preparation conditions and electrical behaviour of different metal-insulator-semiconductor (MIS) structures and semiconductor heterostructures have been studied. The main part of the activity has been an original work aimed at the optimization of memory behaviour of metal-nitride-oxide-silicon (MNOS) structures containing Si or Ge nanocrystals at the nitride-oxide interface or in the nitride layer. Another important result is the observation of an experimental relationship between the size of Si and Ge nanocrystals and their dielectric function.
Full text https://www.otka-palyazat.hu/download.php?type=zarobeszamolo&projektid=48696
Decision
Yes





 

List of publications

  
B. Pődör, Zs. J. Horváth, P. Basa (Editors): Semiconductor Nanocrystals; Proceedings of the First International Workshop on Semiconductor Nanocrystals, SEMINANO2005, September 10-12, 2005, Budapest, Vol.2., MTA MFA, Budapest, 2005., ISBN 963 7371 20 6, ISBN 963 7371 18 4, 216 + 24 oldal., 2005
P. Basa, P. Petrik: SiNx/nc-Si/SiNx multilayers: A spectroscopic ellipsometric study, Romanian J. Information Science and Technology, 8, 235-240., 2005
Zs. J. Horváth, P. Basa, P. Petrik, Cs. Dücső, T. Jászi, L. Dobos, L. Tóth, T. Lohner, B. Pécz, M. Fried: Si nanocrystals in sandwiched SiNx layers, Semiconductor Nanocrystals; Proc. First Int. Workshop SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B. Pődör, Zs. J. Horváth, P. Basa), Vol.1, pp. 417-420., 2005
Zs. J. Horváth, K. Jarrendahl, M. Serényi, M. Ádám, B. Pődör, J. Balázs, Zs. Czigány: Electrical and optical behaviour of sputtered amorphous and polycrystalline Si/Ge multilayers and SiGe layers deposited on monocrystalline Si substrates, Brief Proc. Int. Conf. Solar Renewable Energy News - Research and Applications 2005, SREN 2005, Florence, Italy, April 2-8, 2005, (Ed. R. Brunner), pp.27-29., 2005
G. Molnár, L. Dózsa, G. Pető, Cs. S. Daróczi, Zs. J. Horváth, Z. Vértesy, A. A. Koós, Z. E. Horváth, O. Geszti: Thickness dependent formation of self-assembled silicide nanostructures on Si(001), Semiconductor Nanocrystals; Proc. First Int. Workshop SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B. Pődör, Zs. J. Horváth, P. Basa), Vol.1, pp. 15-18., 2005
Zs. J. Horváth, Cs. Dücső, P. Basa, P. Szöllősi, T. Lohner, P. Petrik, L. Dobos, B. Pécz, L. Tóth, M. Fried: Electrical and memory properties of MIS capacitors with annealed Si-rich SiNx layers, Semiconductor Nanocrystals; Proc. First Int. Workshop SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B. Pődör, Zs. J. Horváth, P. Basa), Vol.1, pp. 201-204., 2005
L. K. Orlov, Zs. J. Horváth, N. L. Ivina, L. M. Vinogradski, V. B. Shevtsov, M. L. Orlov, A. S. Lonchakov, L. Dobos: Peculiarities of the pseudomorphous multilayer SiGe/Si structures with the imperfect boundaries, showing in electrical measurements, Semiconductor Nanocrystals; Proc. First Int. Workshop SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B. Pődör, Zs. J. Horváth, P. Basa), Vol.1, pp. 329-332., 2005
P. Basa, Zs. J. Horváth, G. Battistig, G. Molnár, A. E. Pap, T. Jászi: Electrical and memory behaviour of Ge nanocrystals embedded in MNOS structures, 3rd Int. Workshop on Semiconductor Nanostructures, SEMINANO'07, June 13-16, 2007, Bad Honnef, Germany, Abstract p. 58., 2007
Zs. J. Horváth, A. E. Pap, K. T. Eppich, P. Basa, L. Dobos B. Pécz, L. Tóth: Electrical behaviour of MIS structures with ultrathin chemical oxide, 11th Int. Conf. Formation of Semicond. Interfaces, August 19-24, 2007, Manaus, Brazil, Program and Abstracts, p.184., 2007
O. Yu. Borkovskaya, N. L. Dmitruk, Zs. J. Horváth, I. B. Mamontova, A. V. Sukach: Diffused p-n GaAs junctions with nano/microrelief active interface, Phys. Stat. Sol. (C) 4, 1523–1526, 2007
Basa P., Horváth Zs. J., Jászi T., Molnár Gy., Pap A. E., Dobos L., Tóth L., Pécz B.: Nem-illékony nanokristályos félvezető memóriák, Híradástechnika, LXII, No. 10, pp.43-46, 2007
A. I. Kovalev, D. L. Wainstein, D. I. Tetelbaum, A. N. Mikhailov, Y. Golan, Y. Lifshitz, A. Berman, P. Basa, Zs. J. Horvath: Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies, Int. J. Nanoparticles, 1, 14-316, 2008
M. Shandalov, J. P. Makai, J. Balazs, Zs. J. Horvath, N. Gutman, A. Sa'ar, Y. Golan: Optical properties of size quantized PbSe films chemically deposited on GaAs, Eur. Phys. J. Appl. Phys., 41, 75-80, 2008
L. K. Orlov, Z. J. Horvath, M. L. Orlov, A. T. Lonchakov, N. L. Ivina, L. Dobos: Anomalous electrical properties of Si/Si1–xGex heterostructures with an electron transport channel in Si layers, Physics of the Solid State, 50, 330–340, 2008
Zs. J. Horváth, P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, K. Nagy: Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals, J. Nanosci. Nanotechnol., 8, 812–817, 2008
P. Basa, Gy. Molnár, L. Dobos, B. Pécz, L. Tóth, A. L. Tóth, A. A. Koós, L. Dózsa, Á. Nemcsics, Zs. J. Horváth: Formation of Ge nanocrystals in SiO2 by electron beam evaporation, J. Nanosci. Nanotechnol., 8, 818–822, 2008
Zs. J. Horváth, V. Hardy: Simulation of memory behaviour of non-volatile structures, J. Nanosci. Nanotechnol., 8, 834–840, 2008
P. Basa, A. S. Alagoz, T. Lohner, M. Kulakci, R. Turan, K. Nagy, Zs. J. Horváth: Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals, Appl. Surf. Sci., 254, 3626-3629, 2008
L. Dobos, B. Pécz, L. Tóth, Zs.J. Horváth, Z.E. Horváth, B. Beaumont, Z. Bougrioua: Structural and electrical properties of Au and Ti/Au contacts to n-type GaN, Vacuum, 82, 794-798, 2008
Zs. J. Horváth, P. Basa, T. Jászi, A. E. Pap, A. I. Kovalev, D. L. Wainstein, L. Dózsa: MNOS memory structures with embedded silicon nanocrystals, Proc. 16th Int. Symp. “Nanostructures: Physics and Technology”, July 15–19, 2008, Vladivostok, Russia, pp. 126-127, 2008
S. Levichev, P. Basa, Zs. J. Horváth, A. Chahboun, A. G. Rolo, N. P. Barradas, E. Alves, M. J. M. Gomes: Memory effect on CdSe nanocrystals embedded in SiO2 matrix, Solid State Commun., 148, 105–108, 2008
Zs. J. Horváth, V. Rakovics, B. Pődör: Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions, Proc. 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM 2008, October 12-16, 2008, Smolenice, Slovakia, pp. 119-122, 2008
Zs. J. Horváth: Evaluation of Schottky junction parameters from current-voltage characteristics exhibiting large excess currents, Appl. Surf. Sci., 255, 743-745, 2008
S. Levichev, A. Chahboun, P. Basa, A. G. Rolo, N. P. Barradas, E. Alves, Zs. J. Horvath, O. Conde, M. J. M. Gomes: Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering, Microelectron. Eng., 85, 2374-2377, 2008
Zs. J. Horváth, P. Basa: Nanocrystal non-volatile memory devicesron sputtering, Mater. Sci. Forum, 609, 1-9, 2009
Zs. J. Horváth, A. E. Pap, B. Pécz, P. Petrik, P. Basa, T. Szabó, Á. Németh: Electrical behaviour of light and heavy water vapour treated Al/SiOxNy/Si structures prepared by rapid thermal processing, 6th Solid State Surfaces and Interfaces, November 24-27, 2008, Smolenice, Slovakia, Extended Abstract Book pp.72-73., 2008
Zs. J. Horváth, K. Järrendahl, B. Pődör, Zs. Czigány: Hopping conduction in sputtered amorphous Si/Ge multilayers and mixed SiGe layers, 1st Int. Conf. Thin Films and Porous Materials, May 19-22, 2008, Algiers, Algeria, Abstracts p. 71., 2008
Horváth Zs. J.: Félvezető eszközszerkezetek - új jelenségek, új közelítések, MTA doktori értekezés, Budapest, 2008
P. Basa: Semiconductor nanocrystals in dielectrics for memory purposes, PhD Thesis, Budapest University of Technology and Economics, 2008; www.mfa.kfki.hu/~basa, 2008
Zs. J. Horváth, P. Basa: Chapter 5: Nanocrystal memory structures, in: Nanocrystals and Quantum Dots of Group IV Semiconductors, (Eds. T. V. Torchinskaya, Yu. V. Vorobiev), American Scientific Publishers, in press., 2009
P. Basa, P. Petrik, M. Fried, A. Dâna, A. Aydinli, S. Foss, T. G. Finstad: Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO2 using parametric models, Phys. Stat. Sol. (C) 5, 1332–1336, 2008
L. K. Orlov, N. L. Ivina, A.V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J. Horvath: Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures, Microel. J., 36, 518-521, 2005
V. Rakovics, Zs. J. Horváth, Z. E. Horváth, I. Bársony, C. Frigeri, T. Besagni: Investigation of CdS/InP heterojunction prepared by chemical bath deposition, Phys. Stat. Sol. (C), 4, No. 4, 1490–1493, DOI 10.1002/pssc.200674153, 2007
P. Basa, Zs.J. Horváth, T. Jászi, A.E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllösi: Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals, Phys. E, 38, 71–75., 2007
P. Basa, P. Petrik, M. Fried, L. Dobos, B. Pécz, L. Tóth: Si nanocrystals in silicon nitride: an ellipsometric study using parametric semiconductor models, Phys. E, 38, 76-79., 2007
L. Dobos, B. Pécz, L. Tóth, Zs. J. Horváth, Z. E. Horváth, A. Tóth, E. Horváth, B. Beaumont, Z. Bougrioua: Metal contacts to n-GaN, Appl. Surf. Sci., 253, 655-661, 2006
P. Szöllősi, P. Basa, Cs. Dücső, B. Máté, M. Ádám, T. Lohner, P. Petrik, B. Pécz, L.: Electrical and optical properties of Si-rich SiNx layers: Effect of annealing, Current Appl. Phys., 6, 179-181., 2006
Zs. J. Horváth: Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of related silicon based MIS devices, Current Appl. Phys., 6, 145-148., 2006
Zs. J. Horváth: Electrical pecularities in GaAs and Si based low dimensional structures, Current Appl. Phys., 6, 205-211., 2006
A. Pongrácz, G. Battistig, Cs. Dücső, K.V. Josepovits, P. Deák: Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide, Mater. Sci. Eng. C, 27, 1444-1447, 2007
D.L. Wainstein, A.I. Kovalev, Cs. Ducso, T. Jaszi, P. Basa, Zs.J. Horvath, T. Lohner, P. Petrik: X-ray photoelectron spectroscopy investigations of Si in non-stoichiometric SiNx LPCVD multilayered coatings, Phys. E, 38, 156–159., 2007
B. Pődör, Zs. J. Horváth, P. Basa (Editors): Semiconductor Nanocrystals; Proceedings of the First International Workshop on Semiconductor Nanocrystals, SEMINANO2005, September 10-12, 2005, Budapest, Vol.1., MTA MFA, Budapest, 2005., ISBN 963 7371 19 2, ISBN 963 7371 18 4, 204 + 20 oldal., 2005



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