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Wide bandgap semiconductor layers and devices
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Here you can view and search the projects funded by NKFI since 2004
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List of publications |
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M. Alomari, A. Chuvilin, L. Toth, B. Pecz, J.-F. Carlin, N. Grandjean: C. Gaquie`re, M.-A. di Forte-Poisson, S. Delage, and E. Kohn: Thermal oxidation of lattice matched InAlN/GaN heterostructures, Phys. Status, Solidi C 7, 13, 2010 | Alomari M, Dipalo M, Rossi S, Diforte-Poisson M-A, Delage S, Carlin J-F, Grandjean N, Gaquiere C, Tóth L, Pécz B, Kohn E: Diamond overgrown InAlN/GaN HEMT, Diamond and Related Materials, Diamond and Related Materials, 20(4) 604-608, 2011 | M. D’angelo, G. Deokar, S. Steydli, A. Pongrácz, B. Pécz, M. G. Silly, F. Sirotti and C. Deville Cavellin: In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: a photoemission study, Surface Science, Volume: 606 Issue: 7-8 Pages: 697-701 DOI: 10.1016/j.susc.2011.12.006, 2012 | Dobos, L., Tóth, L., Pécz, B., Horváth, Z.E., Tóth, A.L., Beaumont, B., Bougrioua, Z: The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen, Microelectronic Engineering, volume 90, pp. 118 – 120, 2012 | Dobos L, Tóth L, Pécz B, Horváth ZsJ, Horváth ZE, Tóth AL, Beaumont B, Bougrioua Z: Bilayer Cr/Au contacts on n-GaN, Vacuum, 86 (6) 769-772, 2012 | L Dobos, B Pécz, L Tóth, Z J Horváth, Z E Horváth, A L Tóth, M A Poisson: Annealing of Cr/Au metallizations on p-GaN, 19th International Vacuum Congress IVC-19: Electronic Materials and Processes. EMP-P3-06, Abstract Book pp. 514-515, Paris, France, 2013.09.09-13, 2013 | B Pécz, Zs Baji, Z Lábadi, A Kovács: ZnO layers deposited by Atomic Layer Deposition, Journal of Physics: Conference Series 471 (2013) 012015, 4 oldal, 2013 | Matteo Bosi, Giovanni Attolini, Bela Pécz, Zsolt Zolnai, Laszlo Dobos, Oscar Martínez, Liudi Jiang, Salim Taysir: Structural characterization of 3C-SiC grown using methyltrichlorosilane, Materials Science Forum Vols. 740-742 (2013) pp 291-294, 2013 | Pécz Béla, Tóth Lajos, Barna Árpád, Tsiakatouras George, Ajagunna Adebowale Olufunso, Kovács András, Georgakilas Alexandros: Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer, DIAMOND AND RELATED MATERIALS, 2013, 34: pp. 9-12., 2013 | SB Erenburg, SV Trubina, KS Zhuravlev, TV MAlina and B. Pecz: Diffusion and Deformations in Heterosystems with GaN/AlN Superlattices, According to Data from EXAFS Spectroscopy, Bulletin of the Russian Academy of Sciences. Physics, 2013, Vol. 77, No. 9, pp. 1147–1150, 2013 | L Dobos, B Pécz, L Tóth, Zs J Horváth, Z E Horváth, A L Tóth, M -A Poisson: Annealed Ti/Cr/Al contacts on n-GaN, VACUUM 100: pp. 46-49, 2014 | B. Pécz, J. Stoemenos, M. Voelskow, W. Skorupa, L. Dobos, A. Pongrácz, G.Battistig: Epitaxial 3C-SiC nanocrystal formation at the SiO2 /Si interface by combined carbon implantation and annealing in CO atmosphere, JOURNAL OF APPLIED PHYSICS 105, 083508, 2009 | M. Voelskow, B. Pécz, J. Stoemenos, W. Skorupa: Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere, Nuclear Instruments and Methods in Physics Research B 267 (2009) 1364–1367, 2009 | Dobos L, Pécz B, Tóth L, Horváth ZsJ, Horváth ZE, Horváth E, Tóth A, Beaumont B and Bougrioua Z: Al and Ti/Al contacts on n-GaN, Vacuum 84/1(2009) 228-230, 2009 | Dobos L, Pécz B, Tóth L, Horváth ZE, Tóth A, Beaumont B and Bougrioua Z:: Contacts to heavily doped n-type GaN, MC 2009 Graz, Microscopy Conference, Graz, Austria August 30th-September 4th, MC2009, Vol. 3: Materials Science (Eds: Grogger W, Hofer F, Pölt P.) 29-30, 2009 | Clemens Ostermaier, Gianmauro Pozzovivo, Bernhard Basnar, Werner Schrenk, Jean-Franc¸ois Carlin, Marcus Gonschorek, Nicolas Grandjean, Andrej Vincze, Lajos To´ th, Bela Pe´cz, Gottfried Strasser, Dionyz Pogany, and Jan Kuzmik: Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6, Jpn. J. Appl. Phys. 49, 116506, 2010 | B. Pécz, J. Stoemenos, M. Voelskow, W. Skorupa, L. Dobos and G. Battistig: Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas, Journal of Physics: Conference Series 209, 012045, 2010 | Zs. J. Horváth, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pécz: Electrical behaviour of lateral Al/n-GaN/Al structures, Applied Surface Science 256, 5614–5617, 2010 | Watts BE, Bosi M, Attolini G, Battistig G, Dobos L, Pecz B: CBr4 as precursor for VPE growth of cubic silicon carbide, CRYSTAL RESEARCH AND TECHNOLOGY Volume: 45 Issue: 6 Pages: 583-588, 2010 | G. Attolini, M. Bosi, F. Rossi, BE Watts, G. Salviati, G. Battistiig, L. Dobos and B. Pécz: SiC epitaxial growth on Si(100) substrates using carbon tetrabromide, Materials Science Forum Vols. 645-648, pp 139-142, 2010 | M. Alomari, 1, A. Chuvilin, L. Toth, B. Pecz, J.-F. Carlin, N. Grandjean, C. Gaquière, M.-A. di Forte-Poisson, S. Delage, and E. Kohn: Thermal oxidation of lattice matched InAlN/GaN heterostructures, P hys. Status Solidi C 7, No. 1, 13–16, 2010 | G. Szenes, V. K. Kovács, B. Pécz and V. Skuratov: THE EFFECT OF HEAVY COSMIC-RAY IONS ON SILICATE GRAINS IN THE INTERSTELLAR DUST, Astrophysical Journal 708, 288-292, 2010 | N.G. Galkin, L. Dózsa, E.A. Chusovitin, B. Pécz, L. Dobos: Migration of CrSi2 nanocrystals through nanopipes in the silicon cap, Applied Surface Science, 256, 7331-7334, 2010 | C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, M. Schmid, L. Tóth, B. Pécz, J.-F. Carlin, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany and J. Kuzmik: Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors, Appl. Phys. Lett. 96, 263515, 2010 | Nemcsics Á, Tóth L, Dobos L, Heyn Ch, Stemmann A, Schramm A, Welsch H, Hansen W: Composition of the "GaAs" quantum dot, grown by droplet epitaxy, Superlattices and Microstructures, 48(4) 351-357, 2010 | V. A. Sivakov, G. Börnstrup, B. Pecz, A. Berger, G. Z. Radnoczi, M. Krause and S. H. Christiansen: Realization of Vertical and Zigzag Single Crystalline Silicon Nanowire Architectures,, J. Phys. Chem. C, 2010, 114 (9), pp 3798–3803, 2010 | C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, A. M. Andrews, Y. Douvry, C. Gaquiere, J.C. De Jaeger, L. Tóth, B. Pecz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, and J. Kuzmik: Improvements of High Performance 2‐nm‐thin InAlN∕AlN Barrier Devices by Interface Engineering, PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors , 25–30 July 2010, Seoul, (Korea) AIP Conf. Proc. (2011) 1399, pp. 905-906; doi:, 2011 | Tsiaoussis I, Khranovskyy V, Dimitrakopulos GP, Stoemenos J, Yakimova R, Pecz B: Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates, JOURNAL OF APPLIED PHYSICS Volume: 109 Issue: 4 Article Number: 043507, 2011 | Ákos Nemcsics, Lajos Tóth, László Dobos, Andrea Stemmann: Facetting of the self-assembled droplet epitaxial GaAs quantum dot, Microelectronics Reliability 51(5): 927-930, 2011 | G.Attolini, M.Bosi, B.E.Watts, G. Battistig, L. Dobos, B. Pécz: The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers, Materials Science Forum Vol. 711 (2012) pp 22-26, 2012 | B Pécz, L Tóth, Á Barna, G Tsiakatouras, AO Ajagunna, A Kovács and A Georgakilas: Microscopy of nitride layers grown on diamond, Journal of Physics: Conference Series 326 (2011) 012010, 2011 | A. Nemcsics, Ch.Heyn, L.Toth, L.Dobos, A.Stemmann, W.Hansen: Cross-sectional transmission electronmicroscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes, Journal of CrystalG rowth 335 (2011) 58–61, 2011 | K. S. Shterevaa. P. Sutta ,B . Pecz, I . Novotny, J. Kovac, and V. Tvarozek: Influence of Doping and Co-doping on the Behavior of Sputtered ZnO Thin Films, ECS Transactions, 36(5 )141-148, 2011 | A.V. Tikhonov, T.V. Malin, K.S. Zhuravlev, L. Dobos, B. Pecz: TEM study of defects in AlxGa1−xN layers with different polarity, Journal of Crystal Growth, 338 (2012) 30-24, 2012 |
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