FLAG-ERA Graphitic films of group III nitrides and group II oxides: platform for fundamental studies and applications  Page description

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Details of project

 
Identifier
118914
Type NN
Principal investigator Pécz, Béla
Title in Hungarian FLAG-ERA III-nitrid és II-oxid 2D rétegek formájában
Title in English FLAG-ERA Graphitic films of group III nitrides and group II oxides: platform for fundamental studies and applications
Keywords in Hungarian grafén, aluminium nitrid, elektronmikroszkópia
Keywords in English graphene, AlN, electron microscopy
Discipline
Physics (Council of Physical Sciences)80 %
Ortelius classification: Solid state physics
Material Science and Technology (electronics) (Council of Physical Sciences)20 %
Panel Physics
Department or equivalent Institute of Technical Physics and Materials Science (Centre for Energy Research)
Participants Cora, Ildikó
Fogarassy, Zsolt
Lábár, János
Tóth, Lajos
Starting date 2016-04-01
Closing date 2019-12-31
Funding (in million HUF) 27.564
FTE (full time equivalent) 3.70
state running project





 

Final report

 
Results in Hungarian
A munka egy FLAG ERA project keretében folyt, GRIFONE (Graphitic films of group III nitrides and group II oxides: platform for fundamental studies and applications.) Koordinátor: A. Kakanakova, Linköping Sweden, partner: F. Gianazzo, CNR Catania, Italy. A project célja 2D nitrid és oxid rétegek növesztése grafén és SiC közé, valamint grafén/SiC felületére. A grafénra való növesztést megmintázott grafén/SiC hordozón sikerült megvalósítani. Keynote cikkünket a physica status solidi-ben publikáltuk. Áttörést értünk el az Al2O3 leválasztásában, amikor a grafén egyetlen monoréteg volt. Az Advanced Materials Interfaces-ben publkált cikkünkben tárgyaltuk a buffer réteg szerepét is. A gömbi hiba korrigált TEM mikroszkópunkat használva (üzembe helyezve 2018 júniusában) bizonyítani tudtuk, hogy az MOCVD-vel növesztett mintákban 2D InN van a grafén és a SiC közt. A bandgap STS (Scanning Tunneling Spectroscopy) mérésekből 2 eV (+-0.1)-nak adódott, miközben a bulk érték 0.7 eV. Atomi felbontásban leképeztük a 2D InN-et és EDS-el bizonyítottuk nemcsak az indium, de a nitrogén tartalmat is. Az MOCVD leválasztási paramétereket hangolva lehetségessé vált 2D InN, vagy 2D indium oxid növesztése. A második is félvezető anyag. A 2D GaN növesztési kísérletek szintén sikeresek voltak.
Results in English
The research was carried out in the frame of a FLAG ERA project, GRIFONE (Graphitic films of group III nitrides and group II oxides: platform for fundamental studies and applications.) Coordinator is A. Kakanakova, Linköping Sweden, partner: F. Gianazzo, CNR Catania, Italy. The aim of the study is the growth of 2D nitride layers between graphene and SiC as well as the growth of layers onto graphene/SiC templates. The growth of nitrides over the graphene was achieved on patterned surface of graphene/SiC first. Our keynote paper was published in physica status solidi. We achieved a breakthrough in the deposition of Al2O3 a homogeneous layer was grown, when he graphene is only a monolayer thick. Our manuscript discussed the role of the buffer layer as well, was published in Advanced Materials Interfaces. Using our new aberration corrected TEM (installed in June 2018) we could prove that we have 2D InN in a set of the samples grown by MOCVD. The bandgap of the layer was measured by STS (Scanning Tunneling Spectroscopy) measurements and we got a direct bandgap of 2 eV (+-0.1), while 0.7 eV is characteristic for the bulk. We could image the bilayer of InN and also prove by EDS not only the indium, but the nitrogen content as well. Tuning the deposition parameters in MOCVD it is possible to grow 2D InN, or 2D indium oxide. The second one is also a semiconductor. Experiments to make 2D GaN intercalated between graphene and SiC were also successful.
Full text https://www.otka-palyazat.hu/download.php?type=zarobeszamolo&projektid=118914
Decision
Yes





 

List of publications

 
F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon, Y. Cordier: Graphene integration with nitride semiconductors for high power and high frequency electronics, Phys. Status Solidi A, 1–16, 2016
C. Ildikó, A. Kakanakova, B. Pécz, R. Yakimova, and F. Giannazzo: TEM study of heterostructures of AlN on epitaxial graphene, 13th Multinational Congress on Microscopy, September 24-29, 2017, Rovinj, Croatia;, 2017
B. Pécz, A. Kovács, M. Duchamp, A. Kakanakova, and R. Yakimova,: Microscopy of nitride layers with integrated graphene, 13th Multinational Congress on Microscopy, September 24-29, 2017, Rovinj, Croatia;, 2017
A. Kakanakova, D.G. Sangiovanni, G.K. Gueorguiev, P.O.Å. Persson, R. Yakimova, I. Cora, B. Pécz, and F. Giannazzo: Emerging 2D materials of group III nitrides and MOCVD, Invited presentation at the Session on 2D devices at the XL ENFMC Brazilian Physical Society Meeting, August 27-31, 2017, Armação dos Búzios, RJ, Brazil;, 2017
Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Angelo Armano, Simonpietro Agnello, Bela Pecz, Ivan G. Ivanov, Rositsa Yakimova, and Filippo Giannazzo: Seed-Layer-Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide, Adv. Mater. Interfaces 2019, 1900097 (11 pages), 2019
B. Pécz: Characterization of materials and interfaces in compound semiconductors by transmission electron microscopy, EXMATEC Conference 16-18 May, 2018, Bucharest, Romania, 2018
B. Pécz: Growth of wide bandgap semiconducting layers: a transmission electron microscopy study, YUCOMAT 2018, Sept. 3-7, Herceg Novi, Montenegro, 2018
B. Pécz: Growth and microscopy of 2D nitride layers, 16th Int. Conf. on Nanosciences and Nanotechnology, Thessaloniki 2-5 July 2019 keynote invited, 2019
János L. Lábár, Z. Fogarassy: Automatic processing of a large number of electron diffraction patterns in the TEM, 14th Multinational Congress on Microscopy September 15-20, 2019 in Belgrade, Serbia, oral talk, 2019





 

Events of the project

 
2018-06-28 15:33:55
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